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2015 Cheng-Li Lin, Wei-Yi Chang, Yen-Lun Huang, Pi-Chun Juan, Tse-Wen Wang, Ke-Yu Hung, Cheng-Yu Hsieh, Tsung-Kuei Kang and Jen-Bin Shi, "Resistance switching behavior of ZnO resistive random access memory with a reduced graphene oxide capping layer", Japanese Journal of Applied Physics, 2015
2014 Wen-Chin Chen, Cheng-Yu Hsieh, Yu-Ting Weng, Fu-Sheng Li, Hung-Chun Wu, Nae-Lih Wu, "Effects of a graphene nanosheet conductive additive on the high-capacity lithium-excess manganese–nickel oxide cathodes of lithium-ion batteries", Journal of Applied Electrochemistry, 2014
2014 Y.-R. Chen, K.-F. Chiu, H.C. Lin, C.-L. Chen, C.Y. Hsieh, C.B. Tsai and B.T.T. Chu, "Graphene/activated carbon supercapacitors with sulfonated-polyetheretherketone as solid-state electrolyte and multifunctional binder," Solid State Sciences, P80-85 , 2014
2014 Y.-R. Chen, K.-F. Chiu, H.C. Lin, C.-Y. Hsieh, C.B. Tsai and B.T.T. Chu, "The effect of dispersion status with functionalized graphenes for electric double-layer capacitors," Materials Science and Engineering B, 2014
2013 Wei-Yi Chang, Cheng-Li Lin, Yen-Lune Huang, Cheng-Yu Hsieh, Tse-Wen Wang, and Ke-Yu Hung,"Resistance Switching Behavior of Graphene Oxide (GO) Resistive RAM (RRAM) in Bipolar Operation," International Electron Devices and Materials Symposium (IEDMS) , P1-31 , 2013
2013 Yen-Lune Huang, Cheng-Li Lin, Wei-Yi Chang, Cheng-Yu Hsieh, Ke-Yu Hung, and Tse-Wen Wang,"Effect of Graphene-Oxide Thickness on Reset Process of Graphene Oxide Resistive RAM (GO RRAM) in Bipolar Operation," International Electron Devices and Materials Symposium (IEDMS) , S2-7 , 2013
 
 

 

 
 
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